SiLAS,
a Horizon 2020 FET -Open project
2017-2020
Towards a SiGe nanolaser

Light emission from Hexagonal SiGe

Hexagonal SiGe is a direct bandgap semiconductor for germanium compositions above 70%. 
We indeed observe strong light emission from Hex-SiGe in this compostional range. Moreover, the team at the Technical University of Munich observed indications for optical gain in hexagonal Ge. 

Publications:
- Forbidden Band-Edge Excitons of Wurtzite-GaP: A Theoretical View, physica status solidi (b) 256, 1800238 (2019)
- Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications, Physical Review Materials 3, 034602 (2019)